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The germanium alloy-junction transistor, or alloy transistor, was an early type of bipolar junction transistor, developed at General Electric and RCA in 1951 as an improvement over the earlier grown-junction transistor. The usual construction of an alloy-junction transistor is a germanium crystal forming the base, with emitter and collector alloy beads fused on opposite sides. There were several types of improved alloy-junction transistors developed over the years that they were manufactured. All types of alloy-junction transistors became obsolete in the early 1960s, with the introduction of the planar transistor which could be mass-produced easily while alloy-junction transistors had to be made individually. The first germanium planar transistors had much worse characteristics than alloy-junction germanium transistors of the period, but they cost much less, and the characteristics of planar transistors improved very rapidly, quickly exceeding those of all earlier germanium transistors. == Micro-alloy transistor == The micro-alloy transistor (MAT) was developed by Philco as an improved type of alloy-junction transistor, it offered much higher speed. It is constructed of a semiconductor crystal forming the base, into which a pair of wells are etched (similar to Philco's earlier surface-barrier transistor) on opposite sides then fusing emitter and collector alloy beads into the wells. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Alloy-junction transistor」の詳細全文を読む スポンサード リンク
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